Description
In recent years, the use of thin films of metal chalcogenides has been increased in photovoltaic solar technology. Mainly, semiconductor materials such as Antimony Sulphide (Sb2S3) are used due to their high absorption coefficient and band gap (1.7-2.5 eV). However, Sb2S3 thin films obtained by chemical bath, the most common method of manufacturing them, have an absence of crystallinity, making it necessary to use post-deposit or in situ treatments to improve their crystalline properties, important for the performance of the photovoltaic device. The main objective of this work is to promote, by laser irradiation with ultrashort pulses, the crystallization of thin films of Sb2S3 obtained by a chemical bath. The laser irradiation will be carried out by using femtosecond laser pulses (1030 nm, 250 fs, 2 MHz), varying the irradiation parameters such as fluence, repetition rate, and scanning speed. Also, the characterization of Sb2S3 films is contemplated, before and after laser irradiation. Therefore, it will be determined changes in the structure (X-Ray Diffraction); the thickness of the films (Reflection and Transmission Spectroscopy); the molecular structure (Raman Spectroscopy); its elementary composition (XPS); morphology of the films and their roughness (AFM); optical properties (UV-Vis-NIR Spectroscopy); and, electrical and photoconductivity measurements of the films.
